logo.jpg High Technologies Laboratory
cross.gif line.gif
About Contacts ProductsProjects AgGaGeS4 AgGa1-xInxSe2 HgGa2S4 AgGaGe5Se12
line.gif
dot.gif AgGaGeS4 dot.gif
Structural and Physical Properties
Crystal symmetry and class

Orthorhombic,
C2v ( mm2 )
Space group C192v
Cell parameters(A)

a = 12.028,
b = 22.918,
c = 6.874
Melting point (oC) 835 ± 10
Optical homogeneity Dn < 1*10-4
Density (gram/cm3) 3.80
Absorption coefficient (cm -1) < 0.005
Optical and NLO Properties
Optical transmission ( mm ) 0.5 to 11.5
Fundamental absorption edge ( mm ) 0.47
Energy gap (eV) 2.64

Surface damage threshold
( t = 10 ns, l = 1.06 mm) - 50 MW/cm2
Dispersion of refractive indices
(Experimental values)
l (mm) nx ny nz
0.5 2.4377 2.5128 2.5125
0.6 2.3706 2.4355 2.4362
0.8 2.3151 2.3723 2.3733
1.064 2.2866 2.3411 2.3421
2.0 2.2599 2.3112 2.3144
4.0 2.2497 2.2985 2.3013
10.6 2.2139 2.2472 2.2448
11.5 2.2068 2.2369 2.2324
Nonlinear optical coefficients ( pm/V ):
d31 = ± 15; d32 = ± 8.0; d33 = ± 8.0. X - c, Y - b, Z - a; At l = 1.064 mm 2V = 164.8o
dij defined in the abc frame (mm2 point group, c - polar axis)

Dispersion of refractive indices ( Sellmeier equations, l in mm )
n2x = 11.14357 - 0.16361483 / ( 0.06081829 - l2 ) - 24267.167 / ( 4000 - l2 );
n2y = 11.94768 - 0.18261602 / ( 0.06821353 - l2 ) - 19915.432 / ( 3000 - l2 );
n2z = 12.64467 - 0.17736979 / ( 0.07099873 - l2 ) - 21966.269 / ( 3000 - l2 ).

Types of possible nonlinear processes in the principal planes
of the AgGaGeS4 and effective nonlinearity deff
XY plane YZ plane XZ plane q < V
oe - e, eo - e, deff = 0 oe - o, eo - o, deff = 0 oo - e, deff = d32 cosq;
oo - e, deff = d31 sinj ee - o, deff = d31 sin2q + d32 cos2q oe - e, eo - e, deff = 0

Application

The AgGaGeS4 crystals can be used for frerquency doubling and three-frequency mixing. Parametric oscillators and amplifiers based of AgGaGeS4 can generate continuously tunable radiation in the spectral range from 1 to 11 mm with suitable pump laser.

up about us contact us products